Dose Rate Linearity in 4H-SiC Schottky Diode-Based Detectors at Elevated Temperatures
نویسندگان
چکیده
منابع مشابه
Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures
1.—Department of Physics and Astronomy, Youngstown State University, Youngstown, OH 44555, USA. 2.—Department of Physics, Georgia Southern University, Statesboro, GA 30460, USA. 3.—Department of Physics, Auburn University, Auburn, AL 36849, USA. 4.—Present address: Department of Materials Science and Engineering, University of Illinois at Urbana– Champaign, Urbana, IL 61801, USA. 5.—e-mail: tno...
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ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 2017
ISSN: 0018-9499,1558-1578
DOI: 10.1109/tns.2017.2705519